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2SA1309ASA
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2SA1309ASA

Product Overview

Category:

The 2SA1309ASA belongs to the category of semiconductor devices.

Use:

It is commonly used as a high-frequency amplifier in electronic circuits.

Characteristics:

  • High gain and low noise characteristics
  • Suitable for use in RF applications
  • Small package size

Package:

The 2SA1309ASA is typically available in a small SOT-23 package.

Essence:

This product is essential for amplifying high-frequency signals with minimal noise interference.

Packaging/Quantity:

It is usually packaged in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Maximum Collector-Base Voltage: 50V
  • Maximum Collector Current: 100mA
  • DC Current Gain (hFE): 100 - 400
  • Transition Frequency: 250MHz
  • Power Dissipation: 150mW

Detailed Pin Configuration

The 2SA1309ASA has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High-frequency signal amplification
  • Low noise operation
  • Compact size for space-constrained designs

Advantages and Disadvantages

Advantages

  • High gain
  • Low noise
  • Small package size

Disadvantages

  • Limited maximum collector current
  • Moderate transition frequency

Working Principles

The 2SA1309ASA operates based on the principles of bipolar junction transistors, where it amplifies input signals by controlling the flow of current between its terminals.

Detailed Application Field Plans

This transistor is widely used in various RF applications, including: - Radio frequency amplifiers - Wireless communication systems - RF transmitters and receivers

Detailed and Complete Alternative Models

Some alternative models to the 2SA1309ASA include: - 2SC3356 - 2N3904 - BC547

In conclusion, the 2SA1309ASA is a crucial component in high-frequency amplification circuits, offering high gain and low noise characteristics. Its compact size and suitability for RF applications make it a popular choice in the electronics industry.

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기술 솔루션에 2SA1309ASA 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum collector current of 2SA1309ASA?

    • The maximum collector current of 2SA1309ASA is 1.5A.

  2. What is the maximum collector-emitter voltage of 2SA1309ASA?

    • The maximum collector-emitter voltage of 2SA1309ASA is 50V.

  3. What is the typical hFE (DC current gain) of 2SA1309ASA?

    • The typical hFE of 2SA1309ASA is 60 to 240.

  4. What are the typical applications for 2SA1309ASA?

    • 2SA1309ASA is commonly used in audio amplifiers, power management circuits, and general electronic switching applications.

  5. What is the power dissipation of 2SA1309ASA?

    • The power dissipation of 2SA1309ASA is 1.5W.

  6. Is 2SA1309ASA suitable for high-frequency applications?

    • No, 2SA1309ASA is not recommended for high-frequency applications due to its limited frequency response.

  7. What is the thermal resistance of 2SA1309ASA?

    • The thermal resistance of 2SA1309ASA is approximately 83°C/W.

  8. Can 2SA1309ASA be used in a Darlington configuration?

    • Yes, 2SA1309ASA can be used as a driver transistor in a Darlington configuration to achieve higher current gain.

  9. Does 2SA1309ASA require a heat sink in certain applications?

    • Yes, in high-power applications or when operating close to the maximum power dissipation, a heat sink may be necessary for 2SA1309ASA.

  10. What are the key differences between 2SA1309ASA and similar transistors?

    • The main differences lie in the specific electrical characteristics such as maximum ratings, gain, and frequency response, which should be carefully considered based on the application requirements.