UNR511D00L

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistors
Use: Amplification and switching of electrical signals
Characteristics: High power handling capacity, low on-state resistance, fast switching speed
Package: TO-220F
Essence: NPN Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 5A
• Total Power Dissipation (PT): 30W
• Transition Frequency (fT): 20MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Excellent thermal performance

Advantages and Disadvantages

Advantages: - High power handling capacity - Low on-state resistance - Fast switching speed

Disadvantages: - Sensitive to overvoltage conditions - Limited operating temperature range

Working Principles

The UNR511D00L operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing for amplification and switching of electrical signals.

Detailed Application Field Plans

The UNR511D00L is commonly used in audio amplifiers, power supplies, motor control circuits, and electronic ballasts. Its high power handling capacity and fast switching speed make it suitable for various industrial and consumer electronic applications.

Detailed and Complete Alternative Models

1. UNR511N00L
   • Similar specifications and package
   • NPN Silicon Transistor
2. UNR512D00L
   • Higher Collector-Emitter Voltage (VCEO) at 150V
   • TO-220F package
3. UNR513D00L
   • Lower Collector Current (IC) at 3A
   • Same TO-220F package

This completes the entry for UNR511D00L, providing comprehensive information about its product details, specifications, features, and application fields within the specified word count.