R1LV5256ESA-5SI#B1

Product Overview

Category

R1LV5256ESA-5SI#B1 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

R1LV5256ESA-5SI#B1 is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

R1LV5256ESA-5SI#B1 is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32,768 words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of R1LV5256ESA-5SI#B1 is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (Vcc)
7. Ground (GND)

Functional Features

• Asynchronous operation
• Byte-wide access
• Easy interfacing with microcontrollers and other digital systems
• Non-volatile storage of data
• High-speed read and write operations

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Large storage capacity accommodates a wide range of applications
• Compact package size enables integration into space-constrained devices
• Reliable performance ensures data integrity

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash or hard disk drives
• Volatile memory requires continuous power supply to retain data

Working Principles

R1LV5256ESA-5SI#B1 utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the device consist of flip-flops, which can hold a bit of data as long as power is supplied. The data can be read or written by controlling the appropriate control signals.

Detailed Application Field Plans

R1LV5256ESA-5SI#B1 finds application in various electronic devices and systems, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Networking equipment - Industrial automation systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to R1LV5256ESA-5SI#B1 include: - R1LV5256ESA-7SI#B1: Similar specifications with a slightly slower access time of 70 ns. - R1LV5256ESA-10SI#B1: Similar specifications with a slower access time of 100 ns. - R1LV5256ESA-12SI#B1: Similar specifications with a slower access time of 120 ns.

These alternative models provide options for different speed requirements or cost considerations.

In conclusion, R1LV5256ESA-5SI#B1 is a semiconductor memory device belonging to the SRAM category. It offers high-speed operation, low power consumption, and a large storage capacity. Its compact package size and reliable performance make it suitable for various applications in the electronics industry. However, it has limitations in terms of storage capacity and data volatility. Alternative models with different specifications are available to cater to specific requirements.