BR24G32FV-3GTE2

Product Overview

Category

BR24G32FV-3GTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile: The BR24G32FV-3GTE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 32 kilobits (4 kilobytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• High-speed operation: It provides fast read and write access times.
• Robust design: The BR24G32FV-3GTE2 is designed to withstand harsh environmental conditions.

Package

The BR24G32FV-3GTE2 is available in a compact SOP-8 package.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, even in challenging operating conditions.

Packaging/Quantity

The BR24G32FV-3GTE2 is typically packaged in reels containing 2,000 units.

Specifications

• Memory capacity: 32 kilobits (4 kilobytes)
• Interface: I2C
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: 10 years (at 55°C)
• Write endurance: 1 million cycles

Detailed Pin Configuration

The BR24G32FV-3GTE2 features an SOP-8 package with the following pin configuration:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Random access: The BR24G32FV-3GTE2 allows random access to stored data.
• Hardware write protection: It provides a write protect pin for hardware-level data protection.
• Page write mode: This feature enables efficient programming of multiple bytes in a single operation.
• Software write protection: The device supports software-based write protection using specific commands.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast read and write access times enhance overall system performance.
• Durable design withstands challenging environments.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per kilobit compared to larger memory chips.

Working Principles

The BR24G32FV-3GTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within its floating gate transistors. These charges represent binary information, which can be read or modified through appropriate electrical signals.

Detailed Application Field Plans

The BR24G32FV-3GTE2 finds application in various electronic systems, including but not limited to: - Consumer electronics - Automotive systems - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. BR24G16FVT-3GTE2: 16 kilobits (2 kilobytes) capacity, similar features as BR24G32FV-3GTE2.
2. BR24G64FV-3GTE2: 64 kilobits (8 kilobytes) capacity, similar features as BR24G32FV-3GTE2.
3. BR24G128FV-3GTE2: 128 kilobits (16 kilobytes) capacity, similar features as BR24G32FV-3GTE2.

These alternative models offer different storage capacities to suit specific application requirements.

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