BR25L160FVT-WE2

Introduction

The BR25L160FVT-WE2 is a serial EEPROM (Electrically Erasable and Programmable Read-Only Memory) product manufactured by ROHM Semiconductor. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Serial EEPROM
• Use: Data storage and retrieval in various electronic devices
• Characteristics: Low power consumption, high reliability, small form factor
• Package: SOP8 (150mil)
• Essence: Non-volatile memory for storing data in electronic systems
• Packaging/Quantity: Tape & Reel (3000 pcs/reel)

Specifications

• Memory Capacity: 16 Kbit
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Write Endurance: 1 million cycles per byte

Detailed Pin Configuration

The BR25L160FVT-WE2 features the following pin configuration: 1. CS (Chip Select) 2. SO (Serial Data Output) 3. SI (Serial Data Input) 4. SCK (Serial Clock) 5. VSS (Ground) 6. NC (No Connection) 7. WP (Write Protect) 8. VCC (Power Supply)

Functional Features

• High-Speed Data Transfer: Supports SPI interface for fast data transfer
• Low Power Consumption: Ideal for battery-powered devices
• Write Protection: Includes hardware write protection functionality
• Sequential Read Function: Enables sequential read operation for efficient data retrieval

Advantages and Disadvantages

Advantages

• Low power consumption
• High reliability and data retention
• Compact form factor
• Hardware write protection

Disadvantages

• Limited capacity compared to larger EEPROMs
• Higher cost per bit compared to larger EEPROMs

Working Principles

The BR25L160FVT-WE2 operates based on the principles of EEPROM technology, utilizing floating gate transistors to store and retrieve data. When data is written, charge is trapped in the floating gate, altering the transistor's conductivity. This allows for non-volatile data storage even when power is removed.

Detailed Application Field Plans

The BR25L160FVT-WE2 is suitable for a wide range of applications, including but not limited to: - Consumer electronics - Industrial automation - Automotive systems - Medical devices - IoT (Internet of Things) devices

Detailed and Complete Alternative Models

For users seeking alternative options, the following EEPROM products can be considered: - AT24C256C from Microchip Technology - M24M02 from STMicroelectronics - CAT24C256 from ON Semiconductor

In conclusion, the BR25L160FVT-WE2 from ROHM Semiconductor offers a reliable and compact solution for data storage needs in various electronic devices, with its low power consumption, high reliability, and SPI interface making it suitable for diverse applications.

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