Rohm Semiconductor
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DTC123EMT2L
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DTC123EMT2L

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching of electronic signals - Characteristics: Small size, high gain, low noise - Package: TO-92 package - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Available in reels or bulk packaging, quantity varies by supplier

Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 625mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor

Functional Features: - High current gain - Low saturation voltage - Fast switching speed - Low noise

Advantages: - Small size allows for compact circuit design - High gain makes it suitable for low-power applications - Versatile for both amplification and switching purposes

Disadvantages: - Limited power handling capability - Susceptible to thermal runaway at high currents

Working Principles: The DTC123EMT2L operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Signal amplification in sensor circuits - Switching in low-power electronic devices

Detailed and Complete Alternative Models: - 2N3904 - BC547 - 2SC945

This comprehensive entry provides a detailed overview of the DTC123EMT2L transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

기술 솔루션에 DTC123EMT2L 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum collector current of DTC123EMT2L?

    • The maximum collector current of DTC123EMT2L is 100mA.

  2. What is the typical collector-emitter saturation voltage of DTC123EMT2L?

    • The typical collector-emitter saturation voltage of DTC123EMT2L is 0.3V at a collector current of 5mA.

  3. What is the maximum power dissipation of DTC123EMT2L?

    • The maximum power dissipation of DTC123EMT2L is 150mW.

  4. What is the gain (hFE) of DTC123EMT2L?

    • The gain (hFE) of DTC123EMT2L typically ranges from 100 to 300.

  5. What are the recommended operating and storage temperatures for DTC123EMT2L?

    • The recommended operating temperature range for DTC123EMT2L is -55°C to +150°C, and the storage temperature range is -55°C to +150°C.

  6. Is DTC123EMT2L suitable for low-power switching applications?

    • Yes, DTC123EMT2L is suitable for low-power switching applications due to its low collector-emitter saturation voltage and moderate gain.

  7. Can DTC123EMT2L be used in audio amplifier circuits?

    • Yes, DTC123EMT2L can be used in audio amplifier circuits, especially in low-power applications.

  8. What are the typical applications of DTC123EMT2L in technical solutions?

    • Typical applications of DTC123EMT2L include signal amplification, low-power switching, and interface circuits in various electronic devices.

  9. Does DTC123EMT2L require external biasing components?

    • DTC123EMT2L does not require external biasing components, making it suitable for simple circuit designs.

  10. Is DTC123EMT2L available in surface-mount packages?

    • Yes, DTC123EMT2L is available in a surface-mount package, making it suitable for compact and space-constrained designs.