M48T35Y-70MH1E

Product Overview

Category

The M48T35Y-70MH1E belongs to the category of non-volatile static random access memory (NVRAM) chips.

Use

This chip is primarily used for storing critical data in electronic devices, ensuring that the information is retained even when power is lost.

Characteristics

• Non-volatile: The M48T35Y-70MH1E retains data without the need for a continuous power supply.
• Static RAM: It provides fast read and write access times, making it suitable for applications requiring frequent data updates.
• High capacity: The chip offers a storage capacity of 32 kilobits.
• Low power consumption: It operates efficiently, consuming minimal power during both active and standby modes.

Package

The M48T35Y-70MH1E is available in a compact 28-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this chip lies in its ability to provide reliable non-volatile memory storage, ensuring data integrity in various electronic systems.

Packaging/Quantity

The M48T35Y-70MH1E is typically packaged in reels or tubes, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Capacity: 32 kilobits
• Supply Voltage: 4.5V to 5.5V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years

Detailed Pin Configuration

The M48T35Y-70MH1E features a 28-pin configuration with the following pin assignments:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Not Connected (NC)
8. VCC

Functional Features

• Battery Backup: The M48T35Y-70MH1E incorporates an internal lithium energy source, ensuring data retention during power interruptions.
• Automatic Write Protection: The chip includes write protection circuitry to prevent accidental modification of stored data.
• High-Speed Access: With a fast access time of 70 nanoseconds, the M48T35Y-70MH1E enables quick retrieval and storage of information.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data integrity during power loss.
• Fast access times facilitate efficient data handling.
• Compact package size allows for easy integration into various electronic devices.
• Automatic write protection prevents unintended data modifications.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Reliance on battery backup may require periodic maintenance or replacement.

Working Principles

The M48T35Y-70MH1E utilizes a combination of static RAM and non-volatile memory technology. It employs a small internal lithium battery to provide continuous power supply, enabling data retention even when the main power source is disconnected. The chip's circuitry ensures that data can be read from and written to the memory cells efficiently.

Detailed Application Field Plans

The M48T35Y-70MH1E finds applications in various electronic systems, including but not limited to: - Embedded systems - Industrial automation - Medical devices - Automotive electronics - Communication equipment

Detailed and Complete Alternative Models

1. M48T35-70PC1: Similar to M48T35Y-70MH1E, but available in a DIP (Dual In-line Package) format.
2. M48T35AV-10MH1: Offers extended temperature range (-40°C to +125°C) for more demanding environments.
3. M48T35Y-70PC1: Non-RoHS compliant version of M48T35Y-70MH1E, suitable for specific applications.

These alternative models provide similar functionality and can be considered as substitutes based on specific requirements.

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