The STI35N65M5 is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The STI35N65M5 typically has the following pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)
The STI35N65M5 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate current flow between the source and drain terminals.
The STI35N65M5 finds extensive application in various power electronics systems, including but not limited to: - Switching power supplies - Motor control - Inverters - Industrial automation equipment
Some alternative models to the STI35N65M5 include: - IRF840: Similar voltage and current ratings - FDPF33N25: Lower on-resistance with comparable voltage and current ratings - IXFN38N100: Higher voltage rating with similar on-resistance characteristics
In conclusion, the STI35N65M5 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications across various industries.
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What is STI35N65M5?
What are the key features of STI35N65M5?
What are the typical applications of STI35N65M5?
What is the maximum drain-source voltage rating of STI35N65M5?
What is the typical on-resistance of STI35N65M5?
What is the gate-source threshold voltage of STI35N65M5?
What is the maximum continuous drain current of STI35N65M5?
Is STI35N65M5 suitable for high frequency switching applications?
Does STI35N65M5 have built-in protection features?
Where can I find detailed technical specifications and application notes for STI35N65M5?