VND10N06-E

Basic Information Overview

• Category: Power MOSFET
• Use: Switching applications
• Characteristics:
  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate charge
• Package: TO-252 (DPAK)
• Essence: Power transistor for efficient switching
• Packaging/Quantity: Tape and reel, 2,500 units per reel

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 10A
• On-Resistance (RDS(on)): 0.1Ω
• Gate Threshold Voltage (VGS(th)): 2V to 4V
• Total Gate Charge (Qg): 15nC
• Power Dissipation (PD): 2.5W
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The VND10N06-E has three pins:

1. Pin 1: Gate (G)
2. Pin 2: Drain (D)
3. Pin 3: Source (S)

Functional Features

• Efficient switching performance
• Low power dissipation
• High current handling capability
• Suitable for various switching applications
• Enhanced thermal characteristics for improved reliability

Advantages and Disadvantages

Advantages: - Low on-resistance results in reduced power losses - Fast switching speed allows for efficient operation - High current capability enables handling of heavy loads - Low gate charge minimizes drive requirements

Disadvantages: - Limited voltage rating (up to 60V) - Relatively low power dissipation capability

Working Principles

The VND10N06-E is a power MOSFET designed for switching applications. It operates based on the principle of field-effect transistors. When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By controlling the gate voltage, the MOSFET can be turned on or off, allowing for efficient switching of electrical signals.

Detailed Application Field Plans

The VND10N06-E is commonly used in various applications, including:

1. Power supplies
2. Motor control circuits
3. LED lighting systems
4. Automotive electronics
5. Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the VND10N06-E include:

1. VND14NV04-E: Similar specifications with higher voltage rating (100V)
2. VND5E050AK-E: Lower current capability but lower on-resistance (0.05Ω)
3. VND7NV04-E: Higher current capability (15A) with similar voltage rating (60V)
4. VND12NV04-E: Higher voltage rating (120V) with similar current capability (10A)

These alternative models provide flexibility in choosing the most suitable power MOSFET for specific application requirements.

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