LM5101CMAX/NOPB

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High Voltage Gate Driver
• Package: 8-SOIC (Small Outline Integrated Circuit)
• Essence: Efficiently drives high-side and low-side power MOSFETs in a half-bridge configuration
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Supply Voltage: 4.5V to 12V
• Output Current: ±2A peak
• Switching Frequency: Up to 2MHz
• Propagation Delay: 35ns (typical)
• Operating Temperature Range: -40°C to +125°C

Pin Configuration

The LM5101CMAX/NOPB has the following pin configuration:

1. VDD: Supply voltage for the IC
2. HO: High-side gate driver output
3. LO: Low-side gate driver output
4. VSS: Ground reference for the IC
5. SD: Shutdown input
6. RT: External resistor connected to set dead time
7. CT: External capacitor connected to set oscillator frequency
8. HB: Half-bridge node connection

Functional Features

• Efficiently drives high-side and low-side power MOSFETs in a half-bridge configuration
• Provides shoot-through protection to prevent simultaneous conduction of both MOSFETs
• Supports adjustable dead time between high-side and low-side switching
• Offers an integrated bootstrap diode for high-side gate drive
• Includes an undervoltage lockout (UVLO) feature for reliable operation

Advantages and Disadvantages

Advantages

• High voltage capability allows driving of power MOSFETs in various applications
• Adjustable dead time enables optimization for specific system requirements
• Integrated bootstrap diode simplifies circuit design and reduces component count
• UVLO feature ensures safe operation under low voltage conditions

Disadvantages

• Limited output current may not be suitable for high-power applications
• Restricted operating temperature range may limit usage in extreme environments

Working Principles

The LM5101CMAX/NOPB is designed to drive power MOSFETs in a half-bridge configuration. It utilizes a high-side gate driver and a low-side gate driver to control the switching of the MOSFETs. The IC provides shoot-through protection, adjustable dead time, and an integrated bootstrap diode for efficient gate drive.

During operation, the high-side gate driver generates the necessary voltage to turn on the high-side MOSFET, while the low-side gate driver controls the low-side MOSFET. The adjustable dead time prevents both MOSFETs from conducting simultaneously, avoiding shoot-through currents.

The integrated bootstrap diode allows the high-side gate driver to be powered from the voltage across the low-side MOSFET, eliminating the need for an external power supply. This simplifies the circuit design and reduces component count.

Detailed Application Field Plans

The LM5101CMAX/NOPB is commonly used in various applications, including:

1. Switching Power Supplies
2. Motor Drives
3. Solar Inverters
4. LED Lighting Systems
5. Battery Chargers

In these applications, the IC efficiently drives power MOSFETs, enabling high-frequency switching and precise control of power delivery. Its adjustable dead time and shoot-through protection ensure reliable and safe operation.

Alternative Models

1. LM5102: Dual High Voltage Gate Driver
2. LM5113: Triple Half-Bridge Gate Driver
3. LM5109: High Voltage Synchronous Rectifier Controller

These alternative models offer similar functionality and can be considered as substitutes for the LM5101CMAX/NOPB in specific applications.

In conclusion, the LM5101CMAX/NOPB is a high voltage gate driver IC used in power management applications. Its efficient half-bridge configuration, adjustable dead time, and integrated bootstrap diode make it suitable for various applications. While it has limitations in terms of output current and operating temperature range, alternative models are available to meet specific requirements.