BAS40-05-HE3-18

Product Overview

Category

The BAS40-05-HE3-18 belongs to the category of surface mount Schottky barrier diodes.

Use

It is commonly used in electronic circuits for applications such as voltage clamping, signal detection, and RF mixing.

Characteristics

• Low forward voltage drop
• Fast switching speed
• High reliability
• Small package size

Package

The BAS40-05-HE3-18 is typically available in a SOT-23 package.

Essence

The essence of BAS40-05-HE3-18 lies in its ability to provide efficient rectification and signal processing in compact electronic devices.

Packaging/Quantity

It is usually supplied in reels with quantities varying based on manufacturer specifications.

Specifications

• Forward Voltage: 0.32V
• Reverse Voltage: 40V
• Continuous Forward Current: 200mA
• Power Dissipation: 250mW
• Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The BAS40-05-HE3-18 has three pins arranged in the SOT-23 package configuration: 1. Anode 2. Cathode 3. No Connection (NC)

Functional Features

• High-speed switching
• Low leakage current
• Excellent thermal performance

Advantages

• Small form factor
• Low power dissipation
• Suitable for high-frequency applications

Disadvantages

• Limited reverse voltage tolerance
• Sensitivity to overvoltage conditions

Working Principles

The BAS40-05-HE3-18 operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans

The BAS40-05-HE3-18 finds extensive use in: - RF mixers - Signal demodulation circuits - Voltage clamping circuits - High-frequency signal detection

Detailed and Complete Alternative Models

Some alternative models to BAS40-05-HE3-18 include: - BAT54 series - BAV70 series - HSMS-286x series

In conclusion, the BAS40-05-HE3-18 is a versatile surface mount Schottky barrier diode that offers fast switching and low forward voltage drop, making it suitable for various electronic applications, especially those requiring high-speed signal processing and voltage clamping.

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