SI1467DH-T1-GE3

Product Category: Semiconductor Device

Basic Information Overview: - Category: Power MOSFET - Use: Power management in electronic devices - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: DFN (Dual Flat No-Lead) - Essence: Efficient power control and management - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 100A - On-Resistance: 1.6mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected

Functional Features: - High current-carrying capability - Low power dissipation - Fast switching speed - Enhanced thermal performance

Advantages: - Reduced power loss - Improved system efficiency - Compact package size - Enhanced thermal management

Disadvantages: - Sensitivity to voltage spikes - Higher cost compared to traditional MOSFETs - Limited voltage tolerance

Working Principles: The SI1467DH-T1-GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. By modulating the gate voltage, the device efficiently regulates power flow within electronic circuits.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control systems - Battery management systems - LED lighting applications - DC-DC converters

Detailed and Complete Alternative Models: 1. Infineon IPP60R190E6 2. Vishay Si7157DP

This comprehensive entry provides a detailed overview of the SI1467DH-T1-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.