SI2336DS-T1-GE3
Product Overview
Category
The SI2336DS-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used for switching and amplification applications in various electronic circuits.
Characteristics
- Low on-resistance
- High current handling capability
- Fast switching speed
- Low gate drive voltage
- Enhanced thermal performance
Package
The SI2336DS-T1-GE3 is typically available in a compact and industry-standard SOT-23 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 3.2A
- On-Resistance (Rds(on) max): 60mΩ
- Gate-Source Voltage (Vgs): ±8V
- Total Power Dissipation (Pd): 1.25W
Detailed Pin Configuration
The SI2336DS-T1-GE3 features a standard SOT-23 pin configuration with three pins: Drain, Source, and Gate.
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for improved efficiency
- Low gate drive voltage for ease of control
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages
- Efficient power management
- Compact package size
- Suitable for low-voltage applications
Disadvantages
- Limited maximum drain-source voltage
- Moderate continuous drain current rating
Working Principles
The SI2336DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel between the drain and source terminals.
Detailed Application Field Plans
The SI2336DS-T1-GE3 is widely used in: - Battery management systems - Portable electronics - DC-DC converters - Motor control circuits - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the SI2336DS-T1-GE3 include: - SI2301DS-T1-GE3 - SI2319DS-T1-GE3 - SI2351DS-T1-GE3
In conclusion, the SI2336DS-T1-GE3 power MOSFET offers efficient power management and control capabilities, making it suitable for a wide range of electronic applications.
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What is the maximum drain-source voltage of SI2336DS-T1-GE3?
- The maximum drain-source voltage of SI2336DS-T1-GE3 is 20V.
What is the continuous drain current rating of SI2336DS-T1-GE3?
- The continuous drain current rating of SI2336DS-T1-GE3 is 3.7A.
Can SI2336DS-T1-GE3 be used in low-power applications?
- Yes, SI2336DS-T1-GE3 can be used in low-power applications due to its low on-resistance and high efficiency.
What is the typical threshold voltage of SI2336DS-T1-GE3?
- The typical threshold voltage of SI2336DS-T1-GE3 is 1.5V.
Is SI2336DS-T1-GE3 suitable for battery-powered devices?
- Yes, SI2336DS-T1-GE3 is suitable for battery-powered devices due to its low threshold voltage and low power consumption.
Does SI2336DS-T1-GE3 require a heat sink for thermal management?
- In most applications, SI2336DS-T1-GE3 does not require a heat sink due to its low on-resistance and efficient thermal performance.
What are the typical applications of SI2336DS-T1-GE3?
- SI2336DS-T1-GE3 is commonly used in power management, load switching, and battery protection circuits.
Can SI2336DS-T1-GE3 be used in automotive electronics?
- Yes, SI2336DS-T1-GE3 is suitable for automotive electronics applications due to its robustness and reliability.
What is the operating temperature range of SI2336DS-T1-GE3?
- The operating temperature range of SI2336DS-T1-GE3 is typically -55°C to 150°C.
Is SI2336DS-T1-GE3 RoHS compliant?
- Yes, SI2336DS-T1-GE3 is RoHS compliant, making it suitable for environmentally conscious designs.