SI4178DY-T1-GE3

Introduction

The SI4178DY-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is commonly used in various electronic applications due to its unique characteristics and performance. In this entry, we will provide an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SI4178DY-T1-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring power switching and amplification
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management and control
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 42A
• On-Resistance: 4.5mΩ
• Gate Charge: 22nC
• Operating Temperature Range: -55°C to 150°C
• Package Type: DFN5x6-8L

Detailed Pin Configuration

The SI4178DY-T1-GE3 has a DFN package with 8 leads. The detailed pin configuration is as follows: 1. Source 2. Gate 3. Drain 4. NC (Not Connected) 5. NC (Not Connected) 6. NC (Not Connected) 7. NC (Not Connected) 8. Source

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient power control
• High voltage capability for versatile applications
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High efficiency in power management
• Compact package size for space-constrained designs
• Reliable performance under varying operating conditions

Disadvantages

• Sensitive to electrostatic discharge (ESD)
• Limited maximum voltage rating compared to some alternatives

Working Principles

The SI4178DY-T1-GE3 operates based on the principles of field-effect transistors (FETs), utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a suitable gate voltage is applied, the device allows the flow of current between the drain and source terminals, enabling efficient power switching and amplification.

Detailed Application Field Plans

The SI4178DY-T1-GE3 finds extensive use in various applications, including but not limited to: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4178DY-T1-GE3 include: - SI4178DY-T1-GE3 - SI4178DY-T1-GE2 - SI4178DY-T1-GE1 - SI4178DY-T1-GE4

These alternative models offer similar functionality and performance, providing flexibility in design and sourcing options.

In conclusion, the SI4178DY-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications in electronic systems. Its compact package and efficient power management capabilities make it a preferred choice for various design requirements.

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