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SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

Introduction

The SI4403CDY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductors. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductors
  • Use: Power MOSFET for electronic applications
  • Characteristics: High power efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Power management and control
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

  • Voltage - Drain-Source Breakdown (Max): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 8.7A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 18nC @ 10V

Detailed Pin Configuration

The SI4403CDY-T1-GE3 features a standard pin configuration with clear labeling for easy integration into circuit designs.

Functional Features

  • High power efficiency
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Advantages

  • Improved power management capabilities
  • Reduced power losses
  • Enhanced system reliability

Disadvantages

  • Sensitive to voltage spikes
  • Requires careful ESD handling during assembly

Working Principles

The SI4403CDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow within electronic circuits.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems

Detailed and Complete Alternative Models

  • SI4410DY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4459ADY-T1-GE3

In conclusion, the SI4403CDY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among design engineers and manufacturers.

Word Count: 310

기술 솔루션에 SI4403CDY-T1-GE3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum voltage rating for SI4403CDY-T1-GE3?

    • The maximum voltage rating for SI4403CDY-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI4403CDY-T1-GE3?

    • The typical on-resistance of SI4403CDY-T1-GE3 is 25mΩ.
  3. What is the maximum continuous drain current for SI4403CDY-T1-GE3?

    • The maximum continuous drain current for SI4403CDY-T1-GE3 is 9.3A.
  4. What is the gate threshold voltage for SI4403CDY-T1-GE3?

    • The gate threshold voltage for SI4403CDY-T1-GE3 is typically 1V.
  5. What is the operating temperature range for SI4403CDY-T1-GE3?

    • The operating temperature range for SI4403CDY-T1-GE3 is -55°C to 150°C.
  6. Is SI4403CDY-T1-GE3 suitable for battery protection applications?

    • Yes, SI4403CDY-T1-GE3 is suitable for battery protection applications due to its low on-resistance and high drain current capability.
  7. Can SI4403CDY-T1-GE3 be used in automotive electronics?

    • Yes, SI4403CDY-T1-GE3 is suitable for use in automotive electronics due to its wide operating temperature range and robustness.
  8. Does SI4403CDY-T1-GE3 require a heat sink for high-power applications?

    • For high-power applications, it is recommended to use a heat sink with SI4403CDY-T1-GE3 to ensure proper thermal management.
  9. What are the typical applications for SI4403CDY-T1-GE3?

    • Typical applications for SI4403CDY-T1-GE3 include power management, load switching, and motor control in various electronic devices.
  10. Is SI4403CDY-T1-GE3 RoHS compliant?

    • Yes, SI4403CDY-T1-GE3 is RoHS compliant, making it suitable for use in environmentally conscious designs.