SI4403CDY-T1-GE3

Introduction

The SI4403CDY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductors. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Discrete Semiconductors
• Use: Power MOSFET for electronic applications
• Characteristics: High power efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Power management and control
• Packaging/Quantity: Available in reels with varying quantities

Specifications

• Voltage - Drain-Source Breakdown (Max): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.7A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 8.7A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 18nC @ 10V

Detailed Pin Configuration

The SI4403CDY-T1-GE3 features a standard pin configuration with clear labeling for easy integration into circuit designs.

Functional Features

• High power efficiency
• Low on-resistance
• Fast switching speed
• Enhanced thermal performance

Advantages

• Improved power management capabilities
• Reduced power losses
• Enhanced system reliability

Disadvantages

• Sensitive to voltage spikes
• Requires careful ESD handling during assembly

Working Principles

The SI4403CDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow within electronic circuits.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems

Detailed and Complete Alternative Models

• SI4410DY-T1-GE3
• SI4435DDY-T1-GE3
• SI4459ADY-T1-GE3

In conclusion, the SI4403CDY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among design engineers and manufacturers.

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