SI4778DY-T1-GE3

Product Overview

Category

The SI4778DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

• High power handling capability
• Low on-resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4778DY-T1-GE3 is typically available in a compact and efficient PowerPAK SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 84A
• RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SI4778DY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. N/C 5. Source (S) 6. Drain (D) 7. Source (S) 8. Gate (G)

Functional Features

• Low on-resistance for minimal power loss
• High current handling capacity
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability

Advantages

• Efficient power management
• Reduced heat dissipation
• Compact package size
• Suitable for high-current applications

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static discharge

Working Principles

The SI4778DY-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow within a circuit.

Detailed Application Field Plans

The SI4778DY-T1-GE3 is widely used in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4778DY-T1-GE3 include: - SI4569DY-T1-GE3 - SI4835DDY-T1-GE3 - SI4893DY-T1-GE3 - SI4953DY-T1-GE3

In conclusion, the SI4778DY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, despite its higher cost and sensitivity to static discharge. Its efficient power handling, fast switching speed, and compact package make it a preferred choice for modern electronic systems.

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