SI5429DU-T1-GE3
Product Overview
Category
The SI5429DU-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Enhanced thermal performance
Package
The SI5429DU-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.
Essence
This MOSFET is designed to provide efficient power management solutions with minimal heat dissipation.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, typically 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 17A
- On-State Resistance (RDS(on)): 6.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The SI5429DU-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. N/C 5. Source (S) 6. Drain (D) 7. Source (S) 8. Gate (G)
Functional Features
- Low gate charge for efficient switching
- Enhanced avalanche ruggedness
- ESD protection for improved reliability
- RoHS compliant
Advantages and Disadvantages
Advantages
- High power handling capacity
- Efficient thermal performance
- Fast switching speed
- Enhanced reliability due to ESD protection
Disadvantages
- Sensitive to static discharge if mishandled
- May require additional ESD protection measures in sensitive environments
Working Principles
The SI5429DU-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
This MOSFET is widely used in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the SI5429DU-T1-GE3 include: - SI5435DU-T1-GE3 - SI5441DU-T1-GE3 - SI5402DU-T1-GE3 - SI5406DU-T1-GE3
In conclusion, the SI5429DU-T1-GE3 power MOSFET offers high-performance power management capabilities with efficient thermal characteristics, making it suitable for a wide range of applications in various industries.
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기술 솔루션에 SI5429DU-T1-GE3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum voltage rating for SI5429DU-T1-GE3?
- The maximum voltage rating for SI5429DU-T1-GE3 is typically 30V.
What is the maximum current rating for SI5429DU-T1-GE3?
- The maximum continuous drain current for SI5429DU-T1-GE3 is typically 6.3A.
What is the on-resistance (RDS(on)) of SI5429DU-T1-GE3?
- The typical on-resistance (RDS(on)) for SI5429DU-T1-GE3 is around 18mΩ.
What is the gate threshold voltage for SI5429DU-T1-GE3?
- The gate threshold voltage for SI5429DU-T1-GE3 typically ranges from 1V to 2.5V.
What are the recommended operating temperature range for SI5429DU-T1-GE3?
- The recommended operating temperature range for SI5429DU-T1-GE3 is usually -55°C to 150°C.
Is SI5429DU-T1-GE3 suitable for automotive applications?
- Yes, SI5429DU-T1-GE3 is often used in automotive applications due to its robustness and performance.
Does SI5429DU-T1-GE3 have built-in ESD protection?
- Yes, SI5429DU-T1-GE3 typically includes built-in ESD protection features.
What package type does SI5429DU-T1-GE3 come in?
- SI5429DU-T1-GE3 is commonly available in a compact and industry-standard PowerPAK® SO-8 package.
Can SI5429DU-T1-GE3 be used in power management applications?
- Yes, SI5429DU-T1-GE3 is well-suited for power management applications such as load switching and battery protection.
Are there any application notes or reference designs available for using SI5429DU-T1-GE3 in technical solutions?
- Yes, application notes and reference designs for utilizing SI5429DU-T1-GE3 in various technical solutions are often provided by the manufacturer and can be found in the product documentation.