SI6459BDQ-T1-E3
Product Overview
Category
The SI6459BDQ-T1-E3 belongs to the category of power MOSFETs.
Use
It is used as a power switch in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SI6459BDQ-T1-E3 is available in a DFN-8 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices.
Packaging/Quantity
It is typically packaged in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 9A
- On-Resistance (RDS(on)): 14mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 10nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI6459BDQ-T1-E3 has a DFN-8 package with the following pin configuration: 1. GATE 2. SOURCE 3. SOURCE 4. DRAIN 5. DRAIN 6. SOURCE 7. SOURCE 8. GATE
Functional Features
- Low on-resistance for minimal power loss
- High voltage capability for versatile applications
- Fast switching speed for efficient operation
- Low gate charge for reduced drive requirements
Advantages and Disadvantages
Advantages
- Efficient power management
- Versatile application range
- Reduced power loss
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The SI6459BDQ-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SI6459BDQ-T1-E3 is suitable for various applications including: - Power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the SI6459BDQ-T1-E3 include: - SI2302DDS-T1-GE3 - SI3443DV-T1-GE3 - SI7469DP-T1-GE3
In conclusion, the SI6459BDQ-T1-E3 power MOSFET offers high performance and efficiency in power management applications, making it a valuable component in various electronic circuits and systems.
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기술 솔루션에 SI6459BDQ-T1-E3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum operating temperature of SI6459BDQ-T1-E3?
- The maximum operating temperature of SI6459BDQ-T1-E3 is 150°C.
What is the typical input capacitance of SI6459BDQ-T1-E3?
- The typical input capacitance of SI6459BDQ-T1-E3 is 2200pF.
What is the maximum drain-source voltage of SI6459BDQ-T1-E3?
- The maximum drain-source voltage of SI6459BDQ-T1-E3 is 30V.
What is the on-resistance of SI6459BDQ-T1-E3?
- The on-resistance of SI6459BDQ-T1-E3 is typically 15mΩ at VGS = 10V.
What is the gate threshold voltage of SI6459BDQ-T1-E3?
- The gate threshold voltage of SI6459BDQ-T1-E3 is typically 1.5V.
What is the maximum continuous drain current of SI6459BDQ-T1-E3?
- The maximum continuous drain current of SI6459BDQ-T1-E3 is 39A.
Is SI6459BDQ-T1-E3 suitable for automotive applications?
- Yes, SI6459BDQ-T1-E3 is suitable for automotive applications.
What is the package type of SI6459BDQ-T1-E3?
- SI6459BDQ-T1-E3 comes in a PowerPAK® SO-8 package.
Does SI6459BDQ-T1-E3 have overcurrent protection?
- Yes, SI6459BDQ-T1-E3 features overcurrent protection.
What are some common technical solutions that utilize SI6459BDQ-T1-E3?
- Common technical solutions that utilize SI6459BDQ-T1-E3 include motor control, power management, and battery protection in various electronic devices.