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SI7403BDN-T1-E3

SI7403BDN-T1-E3

Product Overview

Category

The SI7403BDN-T1-E3 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive voltage
  • Enhanced thermal performance

Package

The SI7403BDN-T1-E3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.

Essence

The essence of this product lies in its ability to efficiently control and switch high currents with minimal power loss.

Packaging/Quantity

It is commonly packaged in reels containing a specific quantity, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.3A
  • On-Resistance (RDS(ON)): 18mΩ
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7403BDN-T1-E3 has a standard pin configuration with three pins: gate, drain, and source. The pinout is as follows: - Pin 1 (Gate) - Pin 2 (Drain) - Pin 3 (Source)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • Enhanced thermal performance for reliability
  • Low gate drive voltage for ease of control

Advantages and Disadvantages

Advantages

  • Efficient power handling
  • Fast switching capabilities
  • Enhanced thermal performance
  • Low power dissipation

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI7403BDN-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By applying an appropriate gate voltage, the MOSFET can effectively switch high currents with minimal power loss.

Detailed Application Field Plans

The SI7403BDN-T1-E3 finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - LED lighting drivers - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI7403BDN-T1-E3 include: - SI7469DP-T1-GE3 - SI7432DP-T1-GE3 - SI7456DP-T1-GE3 - SI7489DP-T1-GE3

In conclusion, the SI7403BDN-T1-E3 power MOSFET offers efficient power handling, fast switching capabilities, and enhanced thermal performance, making it suitable for a wide range of electronic applications.

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기술 솔루션에 SI7403BDN-T1-E3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum voltage rating for SI7403BDN-T1-E3?

    • The maximum voltage rating for SI7403BDN-T1-E3 is 30V.
  2. What is the maximum continuous drain current for SI7403BDN-T1-E3?

    • The maximum continuous drain current for SI7403BDN-T1-E3 is 4.3A.
  3. What is the on-resistance (RDS(on)) of SI7403BDN-T1-E3?

    • The on-resistance (RDS(on)) of SI7403BDN-T1-E3 is typically 16mΩ at VGS = 10V.
  4. What is the operating temperature range for SI7403BDN-T1-E3?

    • The operating temperature range for SI7403BDN-T1-E3 is -55°C to 150°C.
  5. Is SI7403BDN-T1-E3 suitable for automotive applications?

    • Yes, SI7403BDN-T1-E3 is AEC-Q101 qualified and suitable for automotive applications.
  6. Does SI7403BDN-T1-E3 have built-in ESD protection?

    • Yes, SI7403BDN-T1-E3 has built-in ESD protection.
  7. What is the package type for SI7403BDN-T1-E3?

    • SI7403BDN-T1-E3 comes in a DFN5X6 package.
  8. Can SI7403BDN-T1-E3 be used in power management applications?

    • Yes, SI7403BDN-T1-E3 is suitable for power management applications.
  9. What is the gate threshold voltage for SI7403BDN-T1-E3?

    • The gate threshold voltage for SI7403BDN-T1-E3 is typically 1.5V.
  10. Is SI7403BDN-T1-E3 RoHS compliant?

    • Yes, SI7403BDN-T1-E3 is RoHS compliant.