SIHB24N65EF-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, low on-resistance, fast switching speed - Package: TO-220 Full Pack - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 650V - Current Rating: 24A - On-Resistance: 0.065Ω - Gate Charge: 45nC - Operating Temperature: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-resistance for minimal conduction losses - Fast switching speed for improved efficiency - High voltage rating for robustness in power applications - Enhanced thermal performance for reliability

Advantages and Disadvantages: - Advantages: - High voltage rating - Low on-resistance - Fast switching speed - Enhanced thermal performance - Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static electricity

Working Principles: The SIHB24N65EF-GE3 operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Solar inverters - LED lighting - Electric vehicle charging systems

Detailed and Complete Alternative Models: - Infineon IPP60R190E6 - STMicroelectronics STP36NF06L - ON Semiconductor FDPF33N25T

This comprehensive entry provides a detailed overview of the SIHB24N65EF-GE3 Power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.