SIHF30N60E-GE3

Introduction

The SIHF30N60E-GE3 is a power semiconductor device belonging to the category of Insulated Gate Bipolar Transistors (IGBTs). This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the SIHF30N60E-GE3.

Basic Information Overview

• Category: Insulated Gate Bipolar Transistor (IGBT)
• Use: Power switching applications in various electronic systems
• Characteristics: High voltage and current handling capabilities, low on-state voltage drop, fast switching speed
• Package: TO-220 Full-Pak
• Essence: Efficient power control and management
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer's specifications

Specifications

• Voltage Rating: 600V
• Current Rating: 30A
• Maximum Operating Temperature: 175°C
• Gate-Emitter Voltage: ±20V
• Collector-Emitter Saturation Voltage: 1.8V
• Turn-On Delay Time: 55ns
• Turn-Off Delay Time: 130ns

Detailed Pin Configuration

The SIHF30N60E-GE3 IGBT has a standard TO-220 Full-Pak package with three pins: 1. Collector (C): Connects to the high-power load 2. Emitter (E): Connected to the ground 3. Gate (G): Input for controlling the switching behavior

Functional Features

• High voltage and current handling capacity
• Low on-state voltage drop leading to reduced power losses
• Fast switching speed enabling efficient power control
• Robust construction for reliable performance in demanding applications

Advantages and Disadvantages

Advantages

• Efficient power switching capability
• Low power dissipation
• Suitable for high-frequency applications

Disadvantages

• Sensitive to overvoltage conditions
• Requires careful consideration of driving circuitry

Working Principles

The SIHF30N60E-GE3 operates based on the principles of IGBT technology, where it combines the advantages of MOSFETs and BJTs. When a positive voltage is applied to the gate terminal, it allows current to flow from the collector to the emitter, effectively turning the device "on." Conversely, applying a zero or negative voltage to the gate turns the device "off," blocking the current flow.

Detailed Application Field Plans

The SIHF30N60E-GE3 finds extensive use in various applications including: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the SIHF30N60E-GE3 include: - IRG4PH40UD-EP (Infineon Technologies) - FGA25N120ANTD (Fairchild Semiconductor) - STGW30NC60WD (STMicroelectronics)

In conclusion, the SIHF30N60E-GE3 IGBT offers high-performance power switching capabilities suitable for a wide range of applications, making it a versatile choice for modern electronic systems.

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