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SIHFB11N50A-E3
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SIHFB11N50A-E3

Product Overview

Category

The SIHFB11N50A-E3 belongs to the category of power MOSFETs.

Use

It is used for high-frequency switching applications in power supplies, lighting, and motor control.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHFB11N50A-E3 is available in a TO-220 full-pack package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is typically packaged in reels with a quantity of 1000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 11A
  • On-Resistance (RDS(on)): 0.65Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 16nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHFB11N50A-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables high-frequency operation.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Relatively higher gate charge compared to some alternative models

Working Principles

The MOSFET operates by controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal.

Detailed Application Field Plans

The SIHFB11N50A-E3 is suitable for use in: - Switch-mode power supplies - LED lighting drivers - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SIHFB11N50A-E3 include: - IRF840 - STP16NF06L - FQP27P06

In conclusion, the SIHFB11N50A-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various high-frequency switching applications in power electronics.

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기술 솔루션에 SIHFB11N50A-E3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of SIHFB11N50A-E3?

    • The maximum drain-source voltage of SIHFB11N50A-E3 is 500V.

  2. What is the continuous drain current rating of SIHFB11N50A-E3?

    • The continuous drain current rating of SIHFB11N50A-E3 is 11A.

  3. What is the on-state resistance (RDS(on)) of SIHFB11N50A-E3?

    • The on-state resistance (RDS(on)) of SIHFB11N50A-E3 is typically 0.55 ohms.

  4. Can SIHFB11N50A-E3 be used in high-frequency switching applications?

    • Yes, SIHFB11N50A-E3 is suitable for high-frequency switching applications.

  5. What is the gate threshold voltage of SIHFB11N50A-E3?

    • The gate threshold voltage of SIHFB11N50A-E3 is typically 2.5V.

  6. Is SIHFB11N50A-E3 RoHS compliant?

    • Yes, SIHFB11N50A-E3 is RoHS compliant.

  7. What is the operating temperature range of SIHFB11N50A-E3?

    • The operating temperature range of SIHFB11N50A-E3 is -55°C to 150°C.

  8. Does SIHFB11N50A-E3 have built-in ESD protection?

    • Yes, SIHFB11N50A-E3 features built-in ESD protection.

  9. What package type does SIHFB11N50A-E3 come in?

    • SIHFB11N50A-E3 is available in a TO-220AB package.

  10. Can SIHFB11N50A-E3 be used in automotive applications?

    • Yes, SIHFB11N50A-E3 is suitable for use in automotive applications.