SIHG30N60E-GE3

Product Overview

SIHG30N60E-GE3 belongs to the category of power semiconductor devices. It is commonly used in electronic circuits for switching and amplification purposes. The characteristics of this product include high voltage and current handling capabilities, fast switching speed, and low on-state resistance. It is typically packaged in a TO-247 package and is available in both single and bulk quantities.

Specifications

• Voltage Rating: 600V
• Current Rating: 30A
• Package Type: TO-247
• Switching Speed: <100ns
• On-State Resistance: <0.2Ω

Detailed Pin Configuration

The SIHG30N60E-GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage and current handling capacity
• Fast switching speed
• Low on-state resistance
• Enhanced thermal performance

Advantages

• Suitable for high-power applications
• Efficient switching characteristics
• Low conduction losses

Disadvantages

• Requires careful thermal management
• Sensitive to overvoltage conditions

Working Principles

When a suitable voltage is applied to the gate terminal, the device allows current to flow between the drain and source terminals. By controlling the gate voltage, the device can be switched on and off rapidly, making it suitable for various power control applications.

Detailed Application Field Plans

SIHG30N60E-GE3 is widely used in applications such as: - Switched-mode power supplies - Motor control systems - Inverters and converters - Industrial and automotive electronics

Detailed and Complete Alternative Models

Some alternative models to SIHG30N60E-GE3 include: - IRF840 - FGA60N65SMD - STW45NM50FD

In conclusion, SIHG30N60E-GE3 is a versatile power semiconductor device with high voltage and current ratings, fast switching speed, and low on-state resistance. Its applications span across various industries, and it offers efficient power control solutions for electronic circuits.

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