The SIHG40N60E-GE3 belongs to the category of power semiconductor devices.
The specifications of the SIHG40N60E-GE3 include: - Voltage Rating: 600V - Current Rating: 40A - On-State Resistance: 0.15Ω - Switching Speed: <100ns - Package Type: TO-247
The detailed pin configuration of the SIHG40N60E-GE3 includes the gate, drain, and source terminals, which are essential for its operation in circuit designs.
Advantages: - Efficient power switching - Low power dissipation - Suitable for high-frequency applications
Disadvantages: - Sensitive to overvoltage conditions - Requires careful thermal management
The SIHG40N60E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
The SIHG40N60E-GE3 finds extensive use in various applications, including: - Switched-mode power supplies - Motor drives - Inverters - Induction heating systems
Some alternative models to the SIHG40N60E-GE3 include: - IRFP460 - STGW40NC60WD - FGA40N65SMD
This comprehensive range of alternative models provides flexibility in design and sourcing options for similar power semiconductor requirements.
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What is the maximum voltage rating of SIHG40N60E-GE3?
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What is the on-state resistance of SIHG40N60E-GE3?
What type of package does SIHG40N60E-GE3 come in?
Is SIHG40N60E-GE3 suitable for high-power applications?
What is the operating temperature range of SIHG40N60E-GE3?
Does SIHG40N60E-GE3 have built-in protection features?
Can SIHG40N60E-GE3 be used in motor control applications?
What are the typical applications of SIHG40N60E-GE3?
Is SIHG40N60E-GE3 RoHS compliant?