SIHG47N60AE-GE3

Introduction

The SIHG47N60AE-GE3 is a power semiconductor device that belongs to the category of Insulated Gate Bipolar Transistors (IGBTs). This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the SIHG47N60AE-GE3.

Basic Information Overview

• Category: Power Semiconductor Device
• Use: The SIHG47N60AE-GE3 is used as a high-power switching device in various electronic applications such as motor drives, inverters, and power supplies.
• Characteristics: It exhibits high current and voltage handling capabilities, low on-state voltage drop, and fast switching speeds.
• Package: The SIHG47N60AE-GE3 is typically available in a TO-247 package, which provides efficient thermal dissipation.
• Essence: It serves as a crucial component in power electronics systems, enabling efficient control and conversion of electrical power.
• Packaging/Quantity: It is commonly supplied in reels or tubes containing multiple units per package.

Specifications

The SIHG47N60AE-GE3 features the following specifications: - Maximum Collector-Emitter Voltage: 600V - Continuous Collector Current: 47A - Pulsed Collector Current: 190A - Gate-Emitter Threshold Voltage: 4V - Total Gate Charge: 160nC - Turn-On Delay Time: 18ns - Turn-Off Delay Time: 120ns

Detailed Pin Configuration

The SIHG47N60AE-GE3 has a standard three-terminal configuration consisting of the collector, emitter, and gate terminals. The pinout is as follows: - Collector (C): Terminal for connecting to the high-voltage side of the circuit. - Emitter (E): Terminal for connecting to the low-voltage side of the circuit. - Gate (G): Terminal for controlling the switching operation of the IGBT.

Functional Features

• High Current and Voltage Handling: The SIHG47N60AE-GE3 is capable of handling high currents and voltages, making it suitable for power applications.
• Low On-State Voltage Drop: It exhibits low conduction losses, contributing to high efficiency in power conversion.
• Fast Switching Speeds: The device offers rapid turn-on and turn-off characteristics, enabling precise control of power flow.

Advantages and Disadvantages

Advantages

• High power handling capability
• Low conduction losses
• Fast switching speeds
• Robust thermal performance

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful consideration of drive circuitry due to its voltage and current requirements

Working Principles

The SIHG47N60AE-GE3 operates based on the principles of the Insulated Gate Bipolar Transistor. It combines the advantages of MOSFETs and bipolar junction transistors, allowing for efficient control of high power levels through the modulation of the gate signal.

Detailed Application Field Plans

The SIHG47N60AE-GE3 finds extensive use in the following application fields: - Motor Drives: Controlling the speed and direction of electric motors in industrial and automotive systems. - Inverters: Converting DC power to AC for use in renewable energy systems and motor drives. - Power Supplies: Regulating and converting electrical power in various electronic devices and equipment.

Detailed and Complete Alternative Models

Some alternative models to the SIHG47N60AE-GE3 include: - IRGP4063DPBF - FGA25N120ANTD - IXGH40N60C2D1

In conclusion, the SIHG47N60AE-GE3 is a high-performance power semiconductor device with versatile applications in power electronics. Its robust characteristics and efficient operation make it a preferred choice for demanding electronic systems.

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