SIHG73N60AE-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-state resistance - Package: TO-247AC - Essence: Efficient power management - Packaging/Quantity: Bulk packaging, quantity varies

Specifications: - Voltage Rating: 600V - Current Rating: 73A - RDS(ON): 0.065Ω - Gate Charge (Qg): 110nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High voltage capability - Low gate charge - Fast switching speed - Low on-state resistance - Avalanche energy specified - Enhanced body diode dV/dt and di/dt capability

Advantages: - Efficient power management - Suitable for high-power applications - Low conduction losses - Fast switching performance - Reliable operation in harsh environments

Disadvantages: - Higher cost compared to lower-rated MOSFETs - Requires careful handling due to high voltage capability

Working Principles: The SIHG73N60AE-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, it allows the flow of current between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans: - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS) - Switched-mode power supplies (SMPS) - Electric vehicle charging systems

Detailed and Complete Alternative Models: - Infineon IPP073N06N3 G - STMicroelectronics STW75N60M2 - ON Semiconductor NGB8207NT4G - Toshiba TK31N60X

This comprehensive entry provides a detailed overview of the SIHG73N60AE-GE3 Power MOSFET, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.