SIHP14N50D-GE3
Product Overview
Category
The SIHP14N50D-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as in power supplies, motor control, and lighting systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHP14N50D-GE3 is typically available in a TO-220AB package.
Essence
This MOSFET is essential for efficient power conversion and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 14A
- On-Resistance (RDS(on)): 0.45Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 22nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHP14N50D-GE3 has a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in demanding applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in control systems.
Advantages
- Suitable for high-power applications
- Efficient power management
- Reliable performance under high voltages
Disadvantages
- May require additional heat dissipation measures in high-power applications
- Sensitive to static discharge if mishandled during installation
Working Principles
The SIHP14N50D-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is ideal for use in: - Switch-mode power supplies - Motor drives - Lighting ballasts - Inverters
Detailed and Complete Alternative Models
- IRFP460: Similar voltage and current ratings
- STP16NF06: Lower voltage rating but suitable for lower-power applications
- FQP13N10: Lower current rating but suitable for cost-sensitive designs
In conclusion, the SIHP14N50D-GE3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it an essential component in various power management applications.
[Word count: 366]
기술 솔루션에 SIHP14N50D-GE3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum drain-source voltage of SIHP14N50D-GE3?
- The maximum drain-source voltage of SIHP14N50D-GE3 is 500V.
What is the continuous drain current rating of SIHP14N50D-GE3?
- The continuous drain current rating of SIHP14N50D-GE3 is 14A.
What is the on-state resistance (RDS(on)) of SIHP14N50D-GE3?
- The on-state resistance (RDS(on)) of SIHP14N50D-GE3 is typically 0.45 ohms.
Can SIHP14N50D-GE3 be used in high-frequency switching applications?
- Yes, SIHP14N50D-GE3 can be used in high-frequency switching applications due to its fast switching characteristics.
What is the maximum junction temperature of SIHP14N50D-GE3?
- The maximum junction temperature of SIHP14N50D-GE3 is 150°C.
Is SIHP14N50D-GE3 suitable for use in power supplies and inverters?
- Yes, SIHP14N50D-GE3 is suitable for use in power supplies and inverters due to its high voltage and current ratings.
Does SIHP14N50D-GE3 require a heat sink for proper thermal management?
- Depending on the application and power dissipation, a heat sink may be required for proper thermal management of SIHP14N50D-GE3.
What are the typical gate charge and gate threshold voltage of SIHP14N50D-GE3?
- The typical gate charge of SIHP14N50D-GE3 is 18nC, and the gate threshold voltage is typically 4V.
Can SIHP14N50D-GE3 be used in automotive electronic systems?
- Yes, SIHP14N50D-GE3 is designed for automotive electronic systems and meets relevant industry standards.
What are the recommended mounting and soldering techniques for SIHP14N50D-GE3?
- The recommended mounting technique for SIHP14N50D-GE3 is through-hole mounting, and it should be soldered using industry-standard reflow or wave soldering processes.