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SIHU3N50D-E3

SIHU3N50D-E3

Introduction

The SIHU3N50D-E3 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

The SIHU3N50D-E3 has the following specifications: - Drain-Source Voltage (VDSS): 500V - Continuous Drain Current (ID): 3A - On-Resistance (RDS(ON)): 2.5Ω - Gate Threshold Voltage (VGS(TH)): 2.0V - 4.0V - Total Gate Charge (QG): 10nC

Detailed Pin Configuration

The SIHU3N50D-E3 follows the standard pin configuration for a DPAK package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low on-resistance minimizes power loss and improves efficiency
  • Fast switching speed enables rapid control of power flow

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Suitable for high voltage applications
  • Low power dissipation

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SIHU3N50D-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to regulate the flow of current through the device. By modulating the gate voltage, the MOSFET can effectively switch between conducting and non-conducting states, enabling precise control over power flow.

Detailed Application Field Plans

The SIHU3N50D-E3 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - LED lighting - Audio amplifiers - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the SIHU3N50D-E3 include: - IRF840 - FQP27P06 - STP55NF06L - AOT240L

In conclusion, the SIHU3N50D-E3 power MOSFET offers efficient power management capabilities, making it suitable for a wide range of high voltage applications. Its unique characteristics and functional features position it as a versatile component in electronic designs.

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기술 솔루션에 SIHU3N50D-E3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum voltage rating of SIHU3N50D-E3?

    • The maximum voltage rating of SIHU3N50D-E3 is 500V.
  2. What is the maximum current rating of SIHU3N50D-E3?

    • The maximum current rating of SIHU3N50D-E3 is 3A.
  3. What type of package does SIHU3N50D-E3 come in?

    • SIHU3N50D-E3 comes in a TO-252 (DPAK) package.
  4. What are the typical applications for SIHU3N50D-E3?

    • SIHU3N50D-E3 is commonly used in power management, motor control, and lighting applications.
  5. Does SIHU3N50D-E3 have built-in protection features?

    • Yes, SIHU3N50D-E3 has built-in overcurrent and thermal protection features.
  6. What is the on-state resistance of SIHU3N50D-E3?

    • The on-state resistance of SIHU3N50D-E3 is typically around 1.5 ohms.
  7. Is SIHU3N50D-E3 suitable for high-frequency switching applications?

    • Yes, SIHU3N50D-E3 is designed for high-frequency switching applications.
  8. What is the operating temperature range of SIHU3N50D-E3?

    • The operating temperature range of SIHU3N50D-E3 is -55°C to 150°C.
  9. Can SIHU3N50D-E3 be used in automotive applications?

    • Yes, SIHU3N50D-E3 is suitable for use in automotive systems.
  10. Are there any recommended alternative components to SIHU3N50D-E3?

    • Some recommended alternative components to SIHU3N50D-E3 include STP3N50FI, FDPF3N50NZ, and IPP60R190C6.