The SIR418DP-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and performance capabilities.
The SIR418DP-T1-GE3 features the following specifications: - Voltage Rating: 150V - Continuous Drain Current: 23A - On-Resistance: 0.045 ohms - Gate Threshold Voltage: 2.5V - Maximum Power Dissipation: 2.5W
The pin configuration of the SIR418DP-T1-GE3 is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
The SIR418DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.
The SIR418DP-T1-GE3 is commonly used in the following application fields: - Switching power supplies - Motor control - LED lighting - DC-DC converters
Some alternative models to the SIR418DP-T1-GE3 include: - SiHP18N50C - IPP60R190C7 - FDPF33N25T
In conclusion, the SIR418DP-T1-GE3 power MOSFET offers efficient power management and is well-suited for various high voltage applications, making it a valuable component in modern electronic systems.
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What is SIR418DP-T1-GE3?
What are the key features of SIR418DP-T1-GE3?
How can SIR418DP-T1-GE3 be used in power management applications?
In what types of motor control applications can SIR418DP-T1-GE3 be utilized?
What are the thermal considerations when using SIR418DP-T1-GE3 in technical solutions?
Does SIR418DP-T1-GE3 have built-in protection features?
What are the recommended operating conditions for SIR418DP-T1-GE3?
Can SIR418DP-T1-GE3 be used in automotive applications?
Are there any application notes or reference designs available for SIR418DP-T1-GE3?
Where can I find detailed technical specifications and documentation for SIR418DP-T1-GE3?