SQ2364EES-T1_GE3
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: TO-263-7L - Essence: Efficient power management and control - Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications: - Voltage Rating (Vds): 100V - Continuous Drain Current (Id): 60A - On-State Resistance (Rds(on)): 8.5mΩ - Gate Threshold Voltage (Vgs(th)): 2.5V - Total Gate Charge (Qg): 50nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: N/C - Pin 5: N/C - Pin 6: N/C - Pin 7: Source
Functional Features: - High efficiency in power conversion - Low conduction losses - Fast switching speed - Enhanced thermal performance
Advantages: - Reduced power dissipation - Improved system reliability - Compact design - Suitable for high-frequency applications
Disadvantages: - Sensitivity to overvoltage conditions - Higher cost compared to traditional MOSFETs - Requires careful ESD handling during assembly
Working Principles: The SQ2364EES-T1_GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing efficient power flow.
Detailed Application Field Plans: - DC-DC converters - Motor control systems - Solar inverters - Uninterruptible power supplies (UPS) - Electric vehicle powertrains
Detailed and Complete Alternative Models: - IRF1010EZPbF - FDPF33N25T - STP80NF55-06
This comprehensive entry provides an in-depth understanding of the SQ2364EES-T1_GE3 Power MOSFET, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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What is the application of SQ2364EES-T1_GE3?
What are the key features of SQ2364EES-T1_GE3?
How does SQ2364EES-T1_GE3 contribute to power management solutions?
In what technical solutions can SQ2364EES-T1_GE3 be integrated?
What are the thermal considerations for SQ2364EES-T1_GE3 in technical designs?
Does SQ2364EES-T1_GE3 support high-frequency switching applications?
What are the voltage and current ratings of SQ2364EES-T1_GE3?
Can SQ2364EES-T1_GE3 be used in automotive electronics?
Are there any specific layout considerations when using SQ2364EES-T1_GE3 in PCB designs?
What are the typical operating temperature ranges for SQ2364EES-T1_GE3?