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SUB75P03-07-E3
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SUB75P03-07-E3

Product Overview

Category

The SUB75P03-07-E3 belongs to the category of power MOSFETs.

Use

It is used for controlling and switching high-power circuits in various electronic devices and systems.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The SUB75P03-07-E3 is typically available in a TO-220 package, which provides efficient heat dissipation.

Essence

This power MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 75A
  • On-State Resistance (RDS(on)): 7mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The SUB75P03-07-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-state resistance for minimal power loss
  • High current handling capacity
  • Fast switching speed for efficient circuit operation
  • Robust construction for reliability in demanding applications

Advantages

  • Efficient power management
  • Suitable for high-power applications
  • Reliable performance
  • Compact design for space-saving installations

Disadvantages

  • Higher cost compared to lower power handling components
  • Requires careful thermal management due to high power dissipation

Working Principles

The SUB75P03-07-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SUB75P03-07-E3 is widely used in: - Power supplies - Motor control systems - Inverters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the SUB75P03-07-E3 include: - IRF3709ZPBF - FDP8870 - SI7850DP-T1-GE3 - AUIRF7739L2

In conclusion, the SUB75P03-07-E3 power MOSFET offers high-performance characteristics suitable for a wide range of high-power electronic applications, making it an essential component in modern electronic systems.

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기술 솔루션에 SUB75P03-07-E3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of SUB75P03-07-E3?

    • The maximum drain-source voltage of SUB75P03-07-E3 is 30V.

  2. What is the continuous drain current rating of SUB75P03-07-E3?

    • The continuous drain current rating of SUB75P03-07-E3 is 75A.

  3. What is the on-state resistance (RDS(on)) of SUB75P03-07-E3?

    • The on-state resistance (RDS(on)) of SUB75P03-07-E3 is typically 7mΩ.

  4. What type of package does SUB75P03-07-E3 come in?

    • SUB75P03-07-E3 comes in a TO-263-3 package.

  5. What are the typical applications for SUB75P03-07-E3?

    • SUB75P03-07-E3 is commonly used in power management, motor control, and battery protection applications.

  6. What is the gate-source voltage range for turning on SUB75P03-07-E3?

    • The gate-source voltage range for turning on SUB75P03-07-E3 is typically 2.5V to 4V.

  7. Does SUB75P03-07-E3 have built-in ESD protection?

    • Yes, SUB75P03-07-E3 is designed with built-in ESD protection.

  8. What is the junction temperature range for SUB75P03-07-E3?

    • The junction temperature range for SUB75P03-07-E3 is -55°C to 175°C.

  9. Is SUB75P03-07-E3 suitable for automotive applications?

    • Yes, SUB75P03-07-E3 is suitable for automotive applications due to its high current handling capability and robust design.

  10. Can SUB75P03-07-E3 be used in high-frequency switching applications?

    • Yes, SUB75P03-07-E3 can be used in high-frequency switching applications due to its low on-state resistance and fast switching characteristics.