onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
부품 번호
NCP5109BDR2G
범주
Power Chip > Gate Driver IC
제조사/브랜드
onsemi (Ansemi)
캡슐화
SOIC-8
포장
taping
패키지 수
2500
설명하다
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
견적요청
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재고 81488 PCS
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키워드NCP5109BDR2G
NCP5109BDR2G 전자 부품
NCP5109BDR2G 매상
NCP5109BDR2G 공급자
NCP5109BDR2G 유통 업체
NCP5109BDR2G 데이터 테이블
NCP5109BDR2G 사진
NCP5109BDR2G 가격
NCP5109BDR2G 권하다
NCP5109BDR2G 최저 가격
NCP5109BDR2G 찾다
NCP5109BDR2G 구매
NCP5109BDR2G 칩숏