Toshiba Semiconductor and Storage
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TK12E60W,S1VX
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TK12E60W,S1VX

MOSFET N CH 600V 11.5A TO-220
부품 번호
TK12E60W,S1VX
제조사/브랜드
Toshiba Semiconductor and Storage
시리즈
DTMOSIV
부품현황
Active
포장
Tube
기술
MOSFET (Metal Oxide)
작동 온도
150°C (TJ)
장착 유형
Through Hole
패키지/케이스
TO-220-3
공급자 장치 패키지
TO-220
전력 소비(최대)
110W (Tc)
FET 유형
N-Channel
FET 기능
Super Junction
드레인-소스 전압(Vdss)
600V
전류 - 연속 배수(Id) @ 25°C
11.5A (Ta)
Rds On(최대) @ Id, Vgs
300 mOhm @ 5.8A, 10V
Vgs(일)(최대) @ Id
3.7V @ 600µA
게이트 충전(Qg)(최대) @ Vgs
25nC @ 10V
입력 커패시턴스(Ciss)(최대) @ Vds
890pF @ 300V
구동 전압(최대 Rds 켜짐, 최소 Rds 켜짐)
10V
Vgs(최대)
±30V
견적요청
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재고 9010 PCS
연락처 정보
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키워드TK12E60W,S1VX
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